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HCS190MS
September 1995
Radiation Hardened Synchronous 4-Bit Up/Down Counter
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16 TOP VIEW
P1 Q1 Q0 CE U/D Q2 Q3 GND 1 2 3 4 5 6 7 8 16 VCC 15 P0 14 CP 13 RC 12 TC 11 PL 10 P2 9 P3
Features
* * * * * * * * * * * 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse Latch-Up Free Under Any Conditions Military Temperature Range: -55oC to +125oC Significant Power Reduction Compared to LSTTL ICs DC Operating Voltage Range: 4.5V to 5.5V Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min Input Current Levels Ii 5A at VOL, VOH
*
Description
The Intersil HCS190MS is an asynchronously presettable BCD Decade synchronous counter. Presetting the counter to the number on the preset data inputs (P0 - P3) is accomplished by a low on the parallel load input (PL). Counting occurs when (PL) is high, Count Enable (CE) is low and the Up/Down (U/D) input is either low for up-counting or high for down-counting. The counter is incremented or decremented synchronously with the low-to-high transition of the clock. When an overflow or underflow of the counter occurs, the Terminal Count output (TC), which is low during counting, goes high and remains high for one clock cycle. This output can be used for lookahead carry in high speed cascading. The TC output also initiates the Ripple Clock output (RC) which, normally high, goes low and remains low for the low-level portion of the clock pulse. These counter can be cascaded using the Ripple Carry output. If the decade counter is preset to an illegal state or assumes an illegal state when power is applied, it will return to the normal sequence in one or two counts. The HCS190MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS190MS is supplied in a 16 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).
P1 Q1 Q0 CE U/D Q2 Q3 GND
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16 TOP VIEW
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC P0 CP RC TC PL P2 P3
TRUTH TABLE INPUTS PL H H L H CE L L X H U/D L H X X X X CP OUTPUT FUNCTION Count Up Count Down Preset No Change
H = High Voltage Level L = Low Voltage Level
X = Immaterial =Positive Transistion
Ordering Information
PART NUMBER HCS190DMSR HCS190KMSR HCS190D/Sample HCS190K/Sample HCS190HMSR TEMPERATURE RANGE -55oC -55oC to to +125oC +125oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample Sample Die PACKAGE 16 Lead SBDIP 16 Lead Ceramic Flatpack 16 Lead SBDIP 16 Lead Ceramic Flatpack Die
+25oC +25oC +25oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
Spec Number File Number
260
518836 2251.2
Specifications HCS190MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .25mA Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (All Voltage Reference to the VSS Terminal)
Reliability Information
Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/oC Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Gates
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Time at 4.5V VCC (tr, tf) . . . . . . . 100ns/V Max. Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . VCC to 70% of VCC Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 Output Current (Source) IOH VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V, (Note 2) VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V, (Note 2) VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOH = -50A VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOH = -50A Output Voltage Low VOL VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOL = 50A VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOL = 50A Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND 1 2, 3 1 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MIN -4.8 -4.0 4.8 4.0 VCC -0.1 VCC -0.1 MAX 40 750 UNITS A A mA mA mA mA V
PARAMETER Supply Current
SYMBOL ICC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND
Output Current (Sink)
IOL
Output Voltage High
VOH
1, 2, 3
+25oC, +125oC, -55oC
-
V
1, 2, 3
+25oC, +125oC, -55oC
0.1
V
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
1 2, 3
+25oC +125oC, -55oC +25oC, +125oC, -55oC
-
0.5 5.0 -
A A V
Noise Immunity Functional Test
FN
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, (Note 3)
7, 8A, 8B
NOTES: 1. All voltages reference to device GND. 2. Force/Measure functions may be interchanged. 3. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
Spec Number 261
518836
Specifications HCS190MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10, 11 TPHL VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V 9 10, 11 Pn to Qn TPLH 9 10, 11 TPHL 9 10, 11 CP to Qn TPLH 9 10, 11 TPHL 9 10, 11 CP to RC TPLH 9 10, 11 TPHL 9 10, 11 CP to TC TPLH 9 10, 11 TPHL 9 10, 11 U/D to RC TPLH 9 10, 11 TPHL 9 10, 11 U/D to TC TPLH 9 10, 11 TPHL 9 10, 11 CE to RC TPLH 9 10, 11 TPHL 9 10, 11 NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns. LIMITS TEMPERATURE +25oC +125oC, -55oC +25 C +125oC, -55oC +25 C +125oC, -55oC +25 C +125oC, -55oC +25 C +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC
o o o o
PARAMETER Propagation Delay PL to Qn
SYMBOL TPLH
(NOTES 1, 2) CONDITIONS VCC = 4.5V, VIH = 4.5V, VIL = 0V
MIN 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2
MAX 30 35 35 41 28 33 33 38 31 37 28 34 25 28 24 26 41 49 40 47 37 40 34 40 40 43 40 36 24 25 26 26
UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Spec Number 262
518836
Specifications HCS190MS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation Input Capacitance SYMBOL CPD CONDITIONS VCC = 5.0V, VIH = 5.0V, VIL = 0V, f = 1MHz VCC = 5.0V, VIH = 5.0V, VIL = 0V, f = 1MHz VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V NOTES 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 12 18 12 18 18 27 2 2 2 2 0 0 16 24 20 30 12 18 30 20 1 1 MAX 36 62 10 10 15 22 UNITS pF pF pF pF ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
CIN
Setup Time Pn to PL
TSU
TSU CE to CP TSU U/D to CP Hold Time Pn to PL TH CE to CP TH U/D to CP Pulse Width Time CP TW PL Recovery Time TREC TW TH
Maximum Frequency Output Transition Time NOTE:
FMAX
TTHL TTLH
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS TEMPERATURE +25oC +25oC +25oC MIN -4.0 4.0 MAX 0.75 UNITS mA mA mA
PARAMETER Supply Current Output Current (Source) Output Current (Sink)
SYMBOL ICC IOH IOL
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0 VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0
Spec Number 263
518836
Specifications HCS190MS
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K RAD LIMITS TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25 C +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC
o
PARAMETER Output Voltage High
SYMBOL VOH
(NOTE 1) CONDITIONS VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOH = -50A VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOH = -50A
MIN VCC -0.1 VCC -0.1 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2
MAX 0.1 0.1 5 35 41 33 38 37 34 28 26 49 47 40 40 43 36 25 26
UNITS V V V V A V ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Output Voltage Low
VOL
VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOL = 50A VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOL = 50A
Input Leakage Current Noise Immunity Functional Test Propagation Delay PL to Qn Pn to Qn
IIN FN TPLH TPHL TPLH TPHL
VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, (Note 2) VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V
CP to Qn
TPLH TPHL
CP to RC
TPLH TPHL
CP to TC
TPLH TPHL
U/D to RC
TPLH TPHL
U/D to TC
TPLH TPHL
CE to RC
TPLH TPHL
NOTES: 1. All voltages referenced to device GND. 2. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP 5 5
PARAMETER ICC IOL/IOH
DELTA LIMIT 12A -15% of 0 Hour
Spec Number 264
518836
Specifications HCS190MS
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate group A testing in accordance with Method 5005 of Mil-Std-883 may be exercised. METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 7, 9 Subgroups 1, 2, 3, 9, 10, 11 ICC, IOL/H, IOZL/H READ AND RECORD ICC, IOL/H, IOZL/H ICC, IOL/H, IOZL/H ICC, IOL/H, IOZL/H
TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 NOTE: 1. Except FN test which will be performed 100% go/no-go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN STATIC I BURN-IN (Note 1) 2, 3, 6, 7, 12, 13 STATIC II BURN-IN (Note 1) 2, 3, 6, 7, 12, 13 DYNAMIC BURN-IN (Note 2) NOTES: 1. Each pin except VCC and GND will have a series resistor of 10K 5%. 2. Each pin except VCC and GND will have a series resistor of 1K 5%. 1, 4, 5, 8, 9, 10, 15 2, 3, 6, 7, 12, 13 11, 16 14 8 1, 4, 5, 9, 10, 11, 14, 15, 16 1, 4, 5, 8, 9, 10, 11, 14, 15 16 GROUND 1/2 VCC = 3V 0.5V VCC = 6V 0.5V 50kHz 25kHz TEST METHOD 5005 PRE RAD 1, 7, 9 POST RAD Table 4 READ AND RECORD PRE RAD 1, 7, 9 POST RAD Table 4 (Note 1)
TABLE 9. IRRADIATION TEST CONNECTIONS OPEN 2, 3, 6, 7, 12, 13 GROUND 8 VCC = 5V 0.5V 1, 4, 5, 9, 10, 11, 14, 15, 16
NOTE: Each pin except VCC and GND will have a resistor of 47K 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 265
518836
HCS190MS Intersil Space Level Product Flow - `MS'
Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 1and 2) 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 3) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5)
NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: * Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). * Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. * GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. * X-Ray report and film. Includes penetrometer measurements. * Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). * Lot Serial Number Sheet (Good units serial number and lot number). * Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. * The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
Spec Number 266
518836
HCS190MS Propagation Delay Timing Diagram
VIH VS VSS TPLH TPHL VOH VS VOL OUTPUT CL RL CL = 50pF RL = 500 INPUT
Propagation Delay Load Circuit
DUT TEST POINT
Transition Timing Diagram
VOH TTLH 80% VOL 20% 80% 20% TTHL
OUTPUT
VOLTAGE LEVELS PARAMETER VCC VIH VS VIL GND HCS 4.50 4.50 2.25 0 0 UNITS V V V V V
Pulse Width, Setup, Hold Timing Diagram Propagation Delay Load Circuit Positive Edge Trigger
TW INPUT VIH VIL TSU EN INPUT VIH VIL TH TW VS VS CL RL CL = 50pF RL = 500 DUT TEST POINT
TH = Hold Time TSU = Setup Time TW = Pulse Width AC VOLTAGE LEVELS PARAMETER VCC VIH VS VIL GND HCS 4.50 4.50 2.25 0 0 UNITS V V V V V
Spec Number 267
518836
HCS190MS Die Characteristics
DIE DIMENSIONS: 104 x 86 (mils) 2.65 x 2.19 (mm) METALLIZATION: Type: Si - Al Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness: 13kA 2.6kA WORST CASE CURRENT DENSITY: <2.0 x 105 A/cm2 BOND PAD SIZE: 4 x 4 (mils) 100 x 100m
Metallization Mask Layout
HCS190MS
(16) VCC (2) Q1
(1) P1
(15) P0 Q0 (3)
(14) CP CE (4)
(13) RC
U/D (5)
(12) TC Q2 (6)
(11) PL Q3 (7)
GND (8)
P3 (9)
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask series for the HCS190 is TA14344A.
P2 (10)
Spec Number 268
518836

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